WebJan 25, 2024 · Phase change materials allow non-volatile, fast-speed storage-class memory. However, thermal stability and reliability are the key challenges that limit their … WebMay 1, 2024 · The mass density changes of the face-centered cubic structure and the hexagonal phase structure of the GST material compared to the amorphous structure are 6.86% and 8.86%, respectively [22], Which are much larger than the density change of GaGST material obtained through the experiment.
Oxygen incorporation into GST phase-change memory matrix
GeSbTe (germanium-antimony-tellurium or GST) is a phase-change material from the group of chalcogenide glasses used in rewritable optical discs and phase-change memory applications. Its recrystallization time is 20 nanoseconds, allowing bitrates of up to 35 Mbit/s to be written and direct overwrite capability up to … See more GeSbTe is a ternary compound of germanium, antimony, and tellurium, with composition GeTe-Sb2Te3. In the GeSbTe system, there is a pseudo-line as shown upon which most of the alloys lie. Moving down this … See more Threshold switching occurs when GeSbTe goes from a high resistive state to a conductive state at the threshold field of about 56 V/um. This can be seen from the current-voltage (IV) plot, where current is very low in the amorphous state at low voltage until … See more Another similar material is AgInSbTe. It offers higher linear density, but has lower overwrite cycles by 1-2 orders of magnitude. It is used in groove-only recording formats, often in rewritable CDs. AgInSbTe is known as a growth-dominated material … See more The unique characteristic that makes phase-change memory useful as a memory is the ability to effect a reversible phase change … See more Recently, much research has focused on the material analysis of the phase-change material in an attempt to explain the high speed phase change of GeSbTe. Using EXAFS, it was found that the most matching model for crystalline GeSbTe is a distorted rocksalt … See more WebMetavalent bonding (MVB) is characterized by the competition between electron delocalization as in metallic bonding and electron localization as in covalent or ionic bonding, serving as an essential ingredient in phase-change materials for … scott gross gas company
Switchable distributed Bragg reflector using GST phase …
WebApr 15, 2024 · This is accomplished using a multilayer thin film stack using germanium (Ge) and the phase change material (PCM) Ge 2 Sb 2 Te 5 (GST). The refractive indexes of … WebPhase change materials are at the heart of PCM technology, and their properties to a large extent determine its functionality and success. Optimization of phase change … WebThe phase transition between an amorphous and poly-crystalline state is achieved by Joule heating directly through the 4 μ m × 4 μ m × 350 nm active volume of the chalcogenide phase change pixel. While undoped GST would be challenging to switch in a lateral configuration due to very large resistance in the amorphous state, W-GST allows for ... scott gross md